10 Tbit/inch2 ferroelectric data storage with offset voltage application method

Sunao Hashimoto, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Fcrroelectrics are expected to become one of the next generation ultra-high density data storage media. The requirements for pulse amplitude and the duration to switch the domain were both markedly decreased by using a new domain stabilizing method; offset voltage application method. Additionally, with this method it became possible to invert a smaller domain with a diameter of less than 10 nm. Finally, significant progress was made regarding the memory density for ferroelectric data storage, and an area density of 10.1 Tera-bit/inch 2 was successfully achieved. This represents the highest memory density for rewritable data storage reported to date.

Original languageEnglish
Title of host publicationFerroelectric Thin Films XIII
Pages245-250
Number of pages6
Publication statusPublished - 2005 Dec 1
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume902
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hashimoto, S., & Cho, Y. (2005). 10 Tbit/inch2 ferroelectric data storage with offset voltage application method. In Ferroelectric Thin Films XIII (pp. 245-250). (Materials Research Society Symposium Proceedings; Vol. 902).