10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Soshi Sato, T. Watanebe, Sadahiko Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Hideo Ohno, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Citations (Scopus)

Abstract

We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.

Original languageEnglish
Title of host publication2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesT160-T161
ISBN (Electronic)9784863485013
DOIs
Publication statusPublished - 2015 Aug 25
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: 2015 Jun 162015 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2015-August
ISSN (Print)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
CountryJapan
CityKyoto
Period15/6/1615/6/18

Keywords

  • MRAM
  • MTJ

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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