10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

Hiroaki Honjo; Hideo Sato; Shoji Ikeda; Soshi Sato; T. Watanebe; Sadahiko Miura; T. Nasuno; Y. Noguchi; M. Yasuhira; T. Tanigawa; Hiroki Koike; Masakazu Muraguchi; Masaaki Niwa; Kenchi Ito; Hideo Ohno; Tetsuo Endoh

doi:10.1109/VLSIT.2015.7223661

10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Soshi Sato, T. Watanebe, Sadahiko Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Hiroki Koike, Masakazu Muraguchi, Masaaki Niwa, Kenchi Ito, Hideo Ohno, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

35 Citations (Scopus)

Abstract

We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.

Original language	English
Title of host publication	2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	T160-T161
ISBN (Electronic)	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223661
Publication status	Published - 2015 Aug 25
Event	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan Duration: 2015 Jun 16 → 2015 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2015-August
ISSN (Print)	0743-1562

Other

Other	Symposium on VLSI Technology, VLSI Technology 2015
Country/Territory	Japan
City	Kyoto
Period	15/6/16 → 15/6/18

Keywords

MRAM
MTJ

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2015.7223661

Cite this

Honjo, H., Sato, H., Ikeda, S., Sato, S., Watanebe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Muraguchi, M., Niwa, M., Ito, K., Ohno, H., & Endoh, T. (2015). 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers (pp. T160-T161). [7223661] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2015.7223661

10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control. / Honjo, Hiroaki; Sato, Hideo; Ikeda, Shoji; Sato, Soshi; Watanebe, T.; Miura, Sadahiko; Nasuno, T.; Noguchi, Y.; Yasuhira, M.; Tanigawa, T.; Koike, Hiroki; Muraguchi, Masakazu; Niwa, Masaaki; Ito, Kenchi; Ohno, Hideo ; Endoh, Tetsuo.

2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. p. T160-T161 7223661 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Honjo, H, Sato, H, Ikeda, S, Sato, S, Watanebe, T, Miura, S, Nasuno, T, Noguchi, Y, Yasuhira, M, Tanigawa, T, Koike, H, Muraguchi, M, Niwa, M, Ito, K, Ohno, H & Endoh, T 2015, 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control. in 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers., 7223661, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., pp. T160-T161, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 15/6/16. https://doi.org/10.1109/VLSIT.2015.7223661

Honjo H, Sato H, Ikeda S, Sato S, Watanebe T, Miura S et al. 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control. In 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2015. p. T160-T161. 7223661. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2015.7223661

Honjo, Hiroaki ; Sato, Hideo ; Ikeda, Shoji ; Sato, Soshi ; Watanebe, T. ; Miura, Sadahiko ; Nasuno, T. ; Noguchi, Y. ; Yasuhira, M. ; Tanigawa, T. ; Koike, Hiroki ; Muraguchi, Masakazu ; Niwa, Masaaki ; Ito, Kenchi ; Ohno, Hideo ; Endoh, Tetsuo. / 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control. 2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2015. pp. T160-T161 (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.",

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10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control

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