@inproceedings{3f56458d56be4dbc9ab7296def489283,
title = "10 cm diameter mono cast Si growth and its characterization",
abstract = "To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using a unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.",
keywords = "Crystallization, Dislocations, Mono silicon, Precipitation, Seed cast growth",
author = "Y. Miyamura and H. Harada and K. Jiptner and J. Chen and Prakash, {R. R.} and Li, {J. Y.} and T. Sekiguchi and T. Kojima and Y. Ohshita and A. Ogura and M. Fukuzawa and S. Nakano and B. Gao and K. Kakimoto",
year = "2014",
doi = "10.4028/www.scientific.net/SSP.205-206.89",
language = "English",
isbn = "9783037858240",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "89--93",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XV",
note = "15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 ; Conference date: 22-09-2013 Through 27-09-2013",
}