10 μm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack

Yuki Ohara, Akihiro Noriki, Katsuyuki Sakuma, Kanuku Ri, Mariappan Murugesan, Jichoru Be, Fumiaki Yamada, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

We develop novel micro-bumping technology to realize small size, fine pitch and uniform height Cu/Sn bumps. Electroplated -evaporation bumping (EEB) technology, which is a combination of Cu electroplating and Sn evaporation, is developed to achieve uniform height of Cu/Sn bumps. We develop CMOS compatible dry etching processes for removing sputtered Cu/Ta layers to achieve small size and fine pitch Cu/Sn bump. 5 μm square and 10 μm pitch Cu/Sn micro-bumps are successfully fabricated for the first time. Bump height variation is 5 μm ±3 % (95%, 2σ), which is uniform compared to electroplated Cu/Sn bumps. We evaluate micro-joining characteristics of Cu/Sn micro-bumps. Good I-V characteristics are measured from the daisy chain consisting of 1500 bumps with 10 μm square and 20 μm pitch. Resistance of Cu/Sn bump is 35 mω/bump, which is very low value compared to electroplated Cu/Sn bumps.

Original languageEnglish
Title of host publication2009 IEEE International Conference on 3D System Integration, 3DIC 2009
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 IEEE International Conference on 3D System Integration, 3DIC 2009 - San Francisco, CA, United States
Duration: 2009 Sep 282009 Sep 30

Publication series

Name2009 IEEE International Conference on 3D System Integration, 3DIC 2009

Other

Other2009 IEEE International Conference on 3D System Integration, 3DIC 2009
Country/TerritoryUnited States
CitySan Francisco, CA
Period09/9/2809/9/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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