Bias-free 1.3μm laser diodes (LDs) have been developed for gigabit/s transmission without temperature control. Power variation as low as 2dB between -20°C and +85°C under 30mA driving current has been attained by introducing strained multiple quatum well (MQW) and short cavity configurations. Wide eye opening has been realised under 1 Gbit/s zero-bias modulation in the temperature range -40 to +85 °C.
- Semiconductor junction lasers
- Semiconductor quantum wells
ASJC Scopus subject areas
- Electrical and Electronic Engineering