1 Gbit/s bias-free operation of 1.3 μm strained MQW-LDs in -40 to +85°C temperature range

H. Yamada, K. Senga, Y. Sasaki, T. Torikai, T. Uji

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Bias-free 1.3μm laser diodes (LDs) have been developed for gigabit/s transmission without temperature control. Power variation as low as 2dB between -20°C and +85°C under 30mA driving current has been attained by introducing strained multiple quatum well (MQW) and short cavity configurations. Wide eye opening has been realised under 1 Gbit/s zero-bias modulation in the temperature range -40 to +85 °C.

Original languageEnglish
Pages (from-to)638-639
Number of pages2
JournalElectronics Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 1995 Apr 13
Externally publishedYes

Keywords

  • Semiconductor junction lasers
  • Semiconductor quantum wells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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