0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Shin Ichi O'Uchi, Yongxun Liu, Tadashi Nakagawa, Wataru Mizubayashi, Shinji Migita, Noriyuki Morita, Hiroyuki Ota, Yuki Ishikawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper demonstrates a 0.8-V rail-to-rail operational amplifier (op-amp) for ultra-low-power Internet-of-Things (IoT) sensor nodes. To suppress the leakage current in the logic part, a FinFET technology with 0.4-V threshold voltage (Vt), is chosen. To realize the rail-to-rail operation in the small common-mode (CM) voltage headroom, VDD-Vt, a 4-stage chopper-stabilized topology with high-pass filters, multi-path hybrid-nested Miller compensation, and a push-pull output stage are introduced. A near-Vt amplifier is also introduced to the second stage to boost the gain. The fabricated op-amp shows 1MHz Gain-Bandwidth in whole of the CM voltage range.

Original languageEnglish
Title of host publication2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509002597
DOIs
Publication statusPublished - 2015 Nov 20
Externally publishedYes
EventIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 - Rohnert Park, United States
Duration: 2015 Oct 52015 Oct 8

Publication series

Name2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015

Other

OtherIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015
CountryUnited States
CityRohnert Park
Period15/10/515/10/8

Keywords

  • FinFET
  • chopper stabilized op-amp
  • near threshold operation
  • push-pull buffer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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