0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL

Katsuyoshi Washio, Masao Kondo, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto, Takashi Harada

Research output: Contribution to journalConference article

29 Citations (Scopus)

Abstract

A 0.2-μm self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, was developed. The process, except the SEG, is almost completely compatible with well-established BiCMOS technology. The SiGe HBTs exhibited a peak maximum oscillation frequency of 107 GHz and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM capacitors and high-Q inductors, were formed by chemical mechanical polishing.

Original languageEnglish
Pages (from-to)557-560
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Washio, K., Kondo, M., Ohue, E., Oda, K., Hayami, R., Tanabe, M., Shimamoto, H., & Harada, T. (1999). 0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL. Technical Digest - International Electron Devices Meeting, 557-560.