0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, T. Tamamura

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21 Citations (Scopus)

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