Abstract
We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03-μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction of gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly, the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic.
Original language | English |
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Pages (from-to) | 206-208 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 20 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1999 May |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering