0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance

D. Xu, T. Suemitsu, J. Osaka, Y. Umeda, Y. Yamane, Y. Ishii, T. Ishii, T. Tamamura

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03-μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction of gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly, the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic.

Original languageEnglish
Pages (from-to)206-208
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number5
DOIs
Publication statusPublished - 1999 May
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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