(0 0 6)-oriented α-Al2O3 films prepared in CO2-H2 atmosphere by laser chemical vapor deposition using a diode laser

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

(0 0 6)-oriented α-Al2O3 films were prepared by laser chemical vapor deposition (LCVD) using aluminum acetylacetonate (Al(acac)3) in CO2-H2 atmosphere. The effects of the CO2 mole fraction (FCO2) and laser power (P L) on the crystal phase, microstructure, and deposition rate (R dep) were investigated. α- and γ-Al2O 3 mixture films were prepared at PL = 90 W (deposition temperature of 818 K), whereas (0 0 6)-oriented single-phase α-Al 2O3 films were obtained at PL = 110 W (863 K). The texture coefficient and the grain size of the (0 0 6)-oriented films increased with increasing FCO2. The orientation of the α-Al2O3 films changed from (0 0 6) to (1 0 4) to (0 1 2) with increasing PL (Tdep). The Rdep of the (0 0 6)-oriented α-Al2O3 films increased with increasing FCO2.

Original languageEnglish
Pages (from-to)984-989
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume176
Issue number13
DOIs
Publication statusPublished - 2011 Aug 15

Keywords

  • Laser CVD, α-AlO
  • Morphology
  • c-Axis growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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