• 2736 Citations
  • 26 h-Index
1993 …2020

Research output per year

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Research Output

Analysis of charge-to-hot-carrier degradation in Ge pFinFETs

Mizubayashi, W., Oka, H., Fukuda, K., Ishikawa, Y. & Endo, K., 2020 Apr, 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9129279. (IEEE International Reliability Physics Symposium Proceedings; vol. 2020-April).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

  • High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: Towards directional micro-LED in top-down structure

    Zhang, K., Takahashi, T., Ohori, D., Cong, G., Endo, K., Kumagai, N., Samukawa, S., Shimizu, M. & Wang, X., 2020 Jul, In : Semiconductor Science and Technology. 35, 7, 075001.

    Research output: Contribution to journalArticle

  • Performance improvement of Ge fin field-effect transistors by post-fin-fabrication annealing

    Mizubayashi, W., Oka, H., Mori, T., Ishikawa, Y., Samukawa, S. & Endo, K., 2020, In : Japanese journal of applied physics. 59, SI, SIIE05.

    Research output: Contribution to journalArticle

  • Atomic layer defect-free etching for germanium using HBr neutral beam

    Fujii, T., Ohori, D., Noda, S., Tanimoto, Y., Sato, D., Kurihara, H., Mizubayashi, W., Endo, K., Li, Y., Lee, Y. J., Ozaki, T. & Samukawa, S., 2019 Sep 1, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 37, 5, 051001.

    Research output: Contribution to journalArticle